JAN1N5809US

Part NumberJAN1N5809US

ManufacturerMicrosemi Corporation

DescriptionDIODE GEN PURP 100V 6A B-MELF

Datasheet1N5807,09,11 US/URS

Package / CaseSQ-MELF, B

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Standard 100V 6A Surface Mount B, SQ-MELF

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JAN1N5809US - Product Attributes

Categories

Discrete Semiconductor Products / Diodes - Rectifiers - Single

Datasheet

1N5807,09,11 US/URS

Standard Package

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/477

Packaging

Bulk

Part Status

Active

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

Voltage - Forward (Vf) (Max) @ If

875mV @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

5µA @ 100V

Capacitance @ Vr, F

60pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

SQ-MELF, B

Supplier Device Package

B, SQ-MELF

Operating Temperature - Junction

-65°C ~ 175°C

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