JAN2N2919U


JAN2N2919U

Part NumberJAN2N2919U

Manufacturer

Description

Package / Case3-SMD, No Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

JAN2N2919U - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Standard Package1
ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/355
PackagingBulk
Part StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Power - Max350mW
Frequency - Transition-
Operating Temperature200°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Supplier Device Package3-SMD

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