Home/Product Catalog/Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single/ JAN2N3019

JAN2N3019

JAN2N3019

Part NumberJAN2N3019

ManufacturerMicrosemi Corporation

DescriptionTRANS NPN 80V 1A TO39

Datasheet2N3019

Package / CaseTO-205AD, TO-39-3 Metal Can

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Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39

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JAN2N3019 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2N3019
Standard Package	1
Manufacturer	Microsemi Corporation
Series	Military, MIL-PRF-19500/391
Packaging	Bulk
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 10V
Power - Max	800mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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