JAN2N3019
JAN2N3019
Part Number JAN2N3019 Description TRANS NPN 80V 1A TO39 Package / Case TO-205AD, TO-39-3 Metal CanUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39
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JAN2N3019 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N3019 Standard Package 1 Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/391 Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA, 10V Power - Max 800mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39
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