JAN2N3019
JAN2N3019
Part Number JAN2N3019
Description TRANS NPN 80V 1A TO39
Package / Case TO-205AD, TO-39-3 Metal Can
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39
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JAN2N3019 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N3019
Standard Package 1
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/391
Packaging Bulk
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA, 10V
Power - Max 800mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
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