JAN2N3439

Part NumberJAN2N3439

ManufacturerMicrosemi Corporation

DescriptionTRANS NPN 350V 1A

Datasheet2N3439-40

Package / CaseTO-205AD, TO-39-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 350V 1A 800mW Through Hole TO-39 (TO-205AD)

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JAN2N3439 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2N3439-40

Standard Package

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/368

Packaging

Bulk

Part Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

500mV @ 4mA, 50mA

Current - Collector Cutoff (Max)

2µA

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 20mA, 10V

Power - Max

800mW

Frequency - Transition

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-205AD, TO-39-3 Metal Can

Supplier Device Package

TO-39 (TO-205AD)

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