JAN2N3810L


JAN2N3810L

Part NumberJAN2N3810L

Manufacturer

Description

Datasheet

Package / CaseTO-78-6 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

JAN2N3810L - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/336
PackagingBulk
Part StatusActive
Transistor Type2 PNP (Dual)
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Power - Max350mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-78-6 Metal Can
Supplier Device PackageTO-78-6

JAN2N3810L - Tags

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