JAN2N3960UB


JAN2N3960UB

Part NumberJAN2N3960UB

Manufacturer

Description

Datasheet

Package / Case3-SMD, No Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

JAN2N3960UB - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package100
ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/399
PackagingBulk
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Vce Saturation (Max) @ Ib, Ic300mV @ 3mA, 30mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 1V
Power - Max400mW
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Supplier Device PackageUB

JAN2N3960UB - Tags

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