JAN2N5581

Part NumberJAN2N5581

ManufacturerMicrosemi Corporation

DescriptionTRANS NPN 50V 0.8A TO46

Datasheet2N5581-82

Package / CaseTO-206AB, TO-46-3 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-46 (TO-206AB)

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JAN2N5581 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2N5581-82

Standard Package

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/423

Packaging

Bulk

Part Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 10V

Power - Max

500mW

Frequency - Transition

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-206AB, TO-46-3 Metal Can

Supplier Device Package

TO-46 (TO-206AB)

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