JAN2N6308

Part NumberJAN2N6308

ManufacturerMicrosemi Corporation

DescriptionTRANS NPN 350V 8A TO3

Datasheet2N6306, 2N6308

Package / CaseTO-204AA, TO-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 350V 8A 125W Through Hole TO-204AA (TO-3)

To learn about the specification of JAN2N6308, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add JAN2N6308 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of JAN2N6308.
We are offering JAN2N6308 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

JAN2N6308 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2N6306, 2N6308

Standard Package

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/498

Packaging

Bulk

Part Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

350V

Vce Saturation (Max) @ Ib, Ic

5V @ 2.67A, 8A

Current - Collector Cutoff (Max)

50µA

DC Current Gain (hFE) (Min) @ Ic, Vce

12 @ 3A, 5V

Power - Max

125W

Frequency - Transition

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AA, TO-3

Supplier Device Package

TO-204AA (TO-3)

All categories