JAN2N6800

Part NumberJAN2N6800

ManufacturerMicrosemi Corporation

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	1
Manufacturer	Microsemi Corporation
Series	Military, MIL-PRF-19500/557
Packaging	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34.75nC @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-39
Package / Case	TO-205AF Metal Can