JAN2N6989

Part NumberJAN2N6989

ManufacturerMicrosemi Corporation

DescriptionTRANS 4NPN 50V 0.8A TO116

Datasheet2N6989(U), 2N6990

Package / Case14-DIP (0.300", 7.62mm)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor Array 4 NPN (Quad) 50V 800mA 1.5W Through Hole TO-116

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JAN2N6989 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays

Datasheet

2N6989(U), 2N6990

Standard Package

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/559

Packaging

Bulk

Part Status

Active

Transistor Type

4 NPN (Quad)

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 10V

Power - Max

1.5W

Frequency - Transition

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

14-DIP (0.300", 7.62mm)

Supplier Device Package

TO-116

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