Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2N6058, 2N6059
Standard Package	1
Manufacturer	Microsemi Corporation
Series	Military, MIL-PRF-19500/502
Packaging	Bulk
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	12A
Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	3V @ 120mA, 12A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 6A, 3V
Power - Max	150W
Frequency - Transition	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Supplier Device Package	TO-3

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2N3904TAR	ON Semiconductor, Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92-3,	View
2SD1624S-TD-E	ON Semiconductor, Bipolar (BJT) Transistor NPN 50V 3A 150MHz 500mW Surface Mount PCP,	View
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PZTA06	ON Semiconductor, Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 1W Surface Mount SOT-223-4,	View
MMBT5551LT1G	ON Semiconductor, Bipolar (BJT) Transistor NPN 160V 600mA 225mW Surface Mount SOT-23-3 (TO-236),	View
KSC2333YTU	ON Semiconductor, Bipolar (BJT) Transistor NPN 400V 2A 15W Through Hole TO-220-3,	View
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JANTX2N6058

Part NumberJANTX2N6058