JANTXV1N5809US

Part NumberJANTXV1N5809US

ManufacturerMicrosemi Corporation

DescriptionDIODE GEN PURP 100V 3A B-MELF

Datasheet1N5807,09,11 US/URS

Package / CaseSQ-MELF, B

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Standard 100V 3A Surface Mount B, SQ-MELF

To learn about the specification of JANTXV1N5809US, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add JANTXV1N5809US with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of JANTXV1N5809US.
We are offering JANTXV1N5809US for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

JANTXV1N5809US - Product Attributes

Categories

Discrete Semiconductor Products / Diodes - Rectifiers - Single

Datasheet

1N5807,09,11 US/URS

Standard Package

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/477

Packaging

Bulk

Part Status

Active

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

Voltage - Forward (Vf) (Max) @ If

875mV @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

5µA @ 100V

Capacitance @ Vr, F

60pF @ 10V, 1MHz

Mounting Type

Surface Mount

Package / Case

SQ-MELF, B

Supplier Device Package

B, SQ-MELF

Operating Temperature - Junction

-65°C ~ 175°C

All categories