JANTXV2N6849

Part NumberJANTXV2N6849

ManufacturerMicrosemi Corporation

DescriptionMOSFET P-CH 100V 6.5A

Datasheet2N6849

Package / CaseTO-205AF Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-205AF (TO-39)

To learn about the specification of JANTXV2N6849, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add JANTXV2N6849 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of JANTXV2N6849.
We are offering JANTXV2N6849 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

JANTXV2N6849 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

2N6849

Standard Package

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/564

Packaging

Bulk

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

320mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34.8nC @ 10V

Vgs (Max)

±20V

FET Feature

Power Dissipation (Max)

800mW (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-205AF (TO-39)

Package / Case

TO-205AF Metal Can

All categories