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KSD1616-G-AP


KSD1616-G-AP

Part NumberKSD1616-G-AP

Manufacturer

Description

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

KSD1616-G-AP - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Standard Package2000
ManufacturerMicro Commercial Co
Series-
Part StatusLast Time Buy
Transistor TypeNPN
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 50mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 2V
Power - Max750mW
Frequency - Transition160MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92

KSD1616-G-AP - Tags

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