LND150N3-G-P003
LND150N3-G-P003
Part Number LND150N3-G-P003
Description MOSFET N-CH 500V 30MA TO92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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Lead Time To be Confirmed
Detailed Description N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3
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LND150N3-G-P003 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet LND150
Standard Package 2000
Manufacturer Microchip Technology
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10pF @ 25V
FET Feature Depletion Mode
Power Dissipation (Max) 740mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
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