Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ LSIC1MO120E0080

LSIC1MO120E0080

LSIC1MO120E0080

Part NumberLSIC1MO120E0080

ManufacturerLittelfuse Inc.

DescriptionMOSFET SIC 1200V 39A TO247-3

DatasheetLSIC1MO120E0080 Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1200V 39A (Tc) 179W (Tc) Through Hole TO-247-3

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LSIC1MO120E0080 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	LSIC1MO120E0080 Datasheet
Standard Package	450
Manufacturer	Littelfuse Inc.
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	95nC @ 20V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	1825pF @ 800V
FET Feature	-
Power Dissipation (Max)	179W (Tc)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

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