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Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/  LSIC1MO120E0080

LSIC1MO120E0080


LSIC1MO120E0080

Part NumberLSIC1MO120E0080

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

LSIC1MO120E0080 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package450
ManufacturerLittelfuse Inc.
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs95nC @ 20V
Vgs (Max)+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds1825pF @ 800V
FET Feature-
Power Dissipation (Max)179W (Tc)
Operating Temperature-55°C ~ 150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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