MAPRST0912-350


MAPRST0912-350

Part NumberMAPRST0912-350

Manufacturer

Description

Datasheet

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Lead TimeTo be Confirmed

Detailed Description

MAPRST0912-350 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package20
ManufacturerM/A-Com Technology Solutions
Series-
PackagingTray
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)65V
Frequency - Transition1.215GHz
Noise Figure (dB Typ @ f)-
Gain9.4dB
Power - Max350W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)32.5A
Operating Temperature200°C (TJ)
Mounting TypeChassis Mount
Package / Case-
Supplier Device Package-

MAPRST0912-350 - Tags

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