MJ11012G
MJ11012G
Part Number MJ11012G Description TRANS NPN DARL 60V 30A TO-3 Package / Case TO-204AA, TO-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)
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MJ11012G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJ11012,15,16 Standard Package 100 Manufacturer ON Semiconductor Series - Packaging Tray Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 30A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V Power - Max 200W Frequency - Transition 4MHz Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-204AA, TO-3 Supplier Device Package TO-204 (TO-3)
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DNLS350E-13 Diodes Incorporated, Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1W Surface Mount SOT-223,
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PBSS4160T,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 60V 1A 220MHz 400mW Surface Mount TO-236AB,
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