MJ11016G
MJ11016G
Part Number MJ11016G
Description TRANS NPN DARL 120V 30A TO3
Package / Case TO-204AA, TO-3
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Detailed Description Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)
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MJ11016G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJ11012,15,16
Standard Package 100
Manufacturer ON Semiconductor
Series -
Packaging Tray
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 30A
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V
Power - Max 200W
Frequency - Transition 4MHz
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3)
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