MJ11032G
MJ11032G
Part Number MJ11032G Description TRANS NPN DARL 120V 50A TO3 Package / Case TO-204AEUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-3
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MJ11032G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJ11028,29,30,32,33 Standard Package 100 Manufacturer ON Semiconductor Series - Packaging Tray Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 50A Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A Current - Collector Cutoff (Max) 2mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A, 5V Power - Max 300W Frequency - Transition - Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-204AE Supplier Device Package TO-3
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STSA1805-AP STMicroelectronics, Bipolar (BJT) Transistor NPN 60V 5A 150MHz 1.1W Through Hole TO-92AP,
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