MJ11032G
MJ11032G
Part Number MJ11032G
Description TRANS NPN DARL 120V 50A TO3
Package / Case TO-204AE
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-3
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MJ11032G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJ11028,29,30,32,33
Standard Package 100
Manufacturer ON Semiconductor
Series -
Packaging Tray
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 50A
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max) 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A, 5V
Power - Max 300W
Frequency - Transition -
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AE
Supplier Device Package TO-3
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