MJ14002G
MJ14002G
Part Number MJ14002G Description TRANS NPN 80V 60A TO3 Package / Case TO-204AEUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-3
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MJ14002G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJ14001,2,3 Standard Package 100 Manufacturer ON Semiconductor Series - Packaging Tray Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 60A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 3V @ 12A, 60A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 50A, 3V Power - Max 300W Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-204AE Supplier Device Package TO-3
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