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MJ14002G

MJ14002G

Part NumberMJ14002G

ManufacturerON Semiconductor

DescriptionTRANS NPN 80V 60A TO3

DatasheetMJ14001,2,3

Package / CaseTO-204AE

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Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-3

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MJ14002G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJ14001,2,3
Standard Package	100
Manufacturer	ON Semiconductor
Series	-
Packaging	Tray
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	60A
Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	3V @ 12A, 60A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 50A, 3V
Power - Max	300W
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AE
Supplier Device Package	TO-3

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