MJD112-001

Part NumberMJD112-001

ManufacturerON Semiconductor

DescriptionTRANS NPN DARL 100V 2A IPAK

DatasheetMJD112,117

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK

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MJD112-001 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

MJD112,117

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Obsolete

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

3V @ 40mA, 4A

Current - Collector Cutoff (Max)

20µA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 2A, 3V

Power - Max

1.75W

Frequency - Transition

25MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Supplier Device Package

I-PAK

Base Part Number

MJD112

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