MJD112-1G
MJD112-1G
Part Number MJD112-1G Description TRANS NPN DARL 100V 2A IPAK Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
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MJD112-1G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD112,117 Standard Package 75 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A Current - Collector Cutoff (Max) 20µA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V Power - Max 1.75W Frequency - Transition 25MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package I-PAK Base Part Number MJD112
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