MJD112T4G


MJD112T4G

Part NumberMJD112T4G

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJD112T4G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max20W
Frequency - Transition25MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
Base Part NumberMJD112

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MJD112T4G - Tags

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