Home/Product Catalog/Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single/ MJD112T4G

MJD112T4G

MJD112T4G

Part NumberMJD112T4G

ManufacturerON Semiconductor

DescriptionTRANS NPN DARL 100V 2A DPAK

DatasheetMJD112,117

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 20W Surface Mount DPAK

To learn about the specification of MJD112T4G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MJD112T4G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of MJD112T4G.
We are offering MJD112T4G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

MJD112T4G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJD112,117
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	2A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Power - Max	20W
Frequency - Transition	25MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Base Part Number	MJD112

MJD112T4G - Related Products

	2SC5100	Sanken, Bipolar (BJT) Transistor NPN 120V 8A 20MHz 75W Through Hole TO-3P,	View
	BC56-16PA-7	Diodes Incorporated, Bipolar (BJT) Transistor NPN 80V 1A 125MHz 520mW Surface Mount U-DFN-2020-3, Automotive, AEC-Q101	View
	MMST4401-7-F	Diodes Incorporated, Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 200mW Surface Mount SOT-323,	View
	FMMT493ATA	Diodes Incorporated, Bipolar (BJT) Transistor NPN 60V 1A 150MHz 500mW Surface Mount SOT-23-3,	View
	BC33740BU	ON Semiconductor, Bipolar (BJT) Transistor NPN 45V 800mA 100MHz 625mW Through Hole TO-92-3,	View
	PMBS3904,235	Nexperia USA Inc., Bipolar (BJT) Transistor NPN 40V 100mA 180MHz 250mW Surface Mount TO-236AB, Automotive, AEC-Q101	View
	STL128D	STMicroelectronics, Bipolar (BJT) Transistor NPN 400V 4A 65W Through Hole TO-220-3,	View
	BC817-40W,115	Nexperia USA Inc., Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 200mW Surface Mount SC-70, Automotive, AEC-Q101	View
	2SC3519	Sanken, Bipolar (BJT) Transistor NPN 160V 15A 50MHz 130W Through Hole TO-3P,	View
	BCX5616QTA	Diodes Incorporated, Bipolar (BJT) Transistor NPN 80V 1A 150MHz 2W Surface Mount SOT-89,	View
	DXT5551-13	Diodes Incorporated, Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 1W Surface Mount SOT-89-3,	View
	DSC2001R0L	Panasonic Electronic Components, Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 200mW Surface Mount Mini3-G3-B,	View

MJD112T4G - Tags

MJD112T4G MJD112T4G PDF MJD112T4G datasheet MJD112T4G specification MJD112T4G image MJD112T4G India Renesas Electronics India MJD112T4G buy MJD112T4G MJD112T4G price MJD112T4G distributor MJD112T4G supplier MJD112T4G wholesales