MJD122-1
MJD122-1
Part Number MJD122-1 Description TRANS NPN DARL 100V 8A TO251 Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Through Hole TO-251-3
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MJD122-1 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD122(T4,-1), MJD127(T4,-1) Standard Package 75 Manufacturer STMicroelectronics Series - Packaging Bulk Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A Current - Collector Cutoff (Max) 10µA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V Power - Max 20W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package TO-251-3 Base Part Number MJD122
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