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MJD122-1

MJD122-1

Part NumberMJD122-1

ManufacturerSTMicroelectronics

DescriptionTRANS NPN DARL 100V 8A TO251

DatasheetMJD122(T4,-1), MJD127(T4,-1)

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Through Hole TO-251-3

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MJD122-1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJD122(T4,-1), MJD127(T4,-1)
Standard Package	75
Manufacturer	STMicroelectronics
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	8A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	4V @ 80mA, 8A
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A, 4V
Power - Max	20W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	TO-251-3
Base Part Number	MJD122

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