MJD122-1
MJD122-1
Part Number MJD122-1
Description TRANS NPN DARL 100V 8A TO251
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Through Hole TO-251-3
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MJD122-1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD122(T4,-1), MJD127(T4,-1)
Standard Package 75
Manufacturer STMicroelectronics
Series -
Packaging Bulk
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Power - Max 20W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TO-251-3
Base Part Number MJD122
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