Home/Product Catalog/Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single/ MJD122T4G

MJD122T4G

MJD122T4G

Part NumberMJD122T4G

ManufacturerON Semiconductor

DescriptionTRANS NPN DARL 100V 8A DPAK

DatasheetMJD122/127, NJVMJD122/127

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK

To learn about the specification of MJD122T4G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MJD122T4G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of MJD122T4G.
We are offering MJD122T4G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

MJD122T4G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJD122/127, NJVMJD122/127
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	8A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	4V @ 80mA, 8A
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A, 4V
Power - Max	1.75W
Frequency - Transition	4MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Base Part Number	MJD122

MJD122T4G - Related Products

	BCV71,215	Nexperia USA Inc., Bipolar (BJT) Transistor NPN 60V 100mA 100MHz 250mW Surface Mount TO-236AB,	View
	DXT5551-13	Diodes Incorporated, Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 1W Surface Mount SOT-89-3,	View
	TIP29A	STMicroelectronics, Bipolar (BJT) Transistor NPN 60V 1A 2W Through Hole TO-220AB,	View
	KSC2331YTA	ON Semiconductor, Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 1W Through Hole TO-92-3,	View
	BC847BLT1G	ON Semiconductor, Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236),	View
	2N3904TF	ON Semiconductor, Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92-3,	View
	TTC5200(Q)	Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 230V 15A 30MHz 150W Through Hole TO-3P(L),	View
	MMSTA06Q-7-F	Diodes Incorporated, Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 200mW Surface Mount SOT-323, Automotive, AEC-Q101	View
	MMBTA42LT1G	ON Semiconductor, Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
	CXTA14 TR	Central Semiconductor Corp, Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 1.2W Surface Mount SOT-89,	View
	FZT651TA	Diodes Incorporated, Bipolar (BJT) Transistor NPN 60V 3A 175MHz 2W Surface Mount SOT-223,	View
	BC848CLT1G	ON Semiconductor, Bipolar (BJT) Transistor NPN 30V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236),	View

MJD122T4G - Tags

MJD122T4G MJD122T4G PDF MJD122T4G datasheet MJD122T4G specification MJD122T4G image MJD122T4G India Renesas Electronics India MJD122T4G buy MJD122T4G MJD122T4G price MJD122T4G distributor MJD122T4G supplier MJD122T4G wholesales