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MJD253-1G

MJD253-1G

Part NumberMJD253-1G

ManufacturerON Semiconductor

DescriptionTRANS PNP 100V 4A IPAK

DatasheetMJD243,253

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK

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MJD253-1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJD243,253
Standard Package	75
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	4A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 1V
Power - Max	1.4W
Frequency - Transition	40MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK
Base Part Number	MJD253

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MJD253-1G - Tags

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