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MJD31C1G

MJD31C1G

Part NumberMJD31C1G

ManufacturerON Semiconductor

DescriptionTRANS NPN 100V 3A IPAK

DatasheetMJD31 (NPN), MJD32 (PNP)

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK

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MJD31C1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJD31 (NPN), MJD32 (PNP)
Standard Package	75
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Power - Max	1.56W
Frequency - Transition	3MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	I-PAK
Base Part Number	MJD31

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