MJD31C1G
MJD31C1G
Part Number MJD31C1G
Description TRANS NPN 100V 3A IPAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK
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MJD31C1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD31 (NPN), MJD32 (PNP)
Standard Package 75
Manufacturer ON Semiconductor
Series -
Packaging Tube
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V
Power - Max 1.56W
Frequency - Transition 3MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Base Part Number MJD31
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