MJD42C1G
MJD42C1G
Part Number MJD42C1G Description TRANS PNP 100V 6A IPAK Package / Case TO-251-3 Short Leads, IPak, TO-251AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Through Hole I-PAK
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MJD42C1G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJD41C, MJD42C Standard Package 75 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A Current - Collector Cutoff (Max) 50µA DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V Power - Max 1.75W Frequency - Transition 3MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package I-PAK Base Part Number MJD42
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2PB709ASL,215 Nexperia USA Inc., Bipolar (BJT) Transistor PNP 45V 100mA 80MHz 250mW Surface Mount TO-236AB, Automotive, AEC-Q101
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PMSS3906,115 Nexperia USA Inc., Bipolar (BJT) Transistor PNP 40V 100mA 150MHz 200mW Surface Mount SC-70,
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2SA1576U3T106R Rohm Semiconductor, Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 200mW Surface Mount UMT3,
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