MJE350G
MJE350G
Part Number MJE350G Description TRANS PNP 300V 0.5A TO225AA Package / Case TO-225AA, TO-126-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP 300V 500mA 20W Through Hole TO-225AA
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MJE350G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MJE350 Standard Package 500 Manufacturer ON Semiconductor Series - Packaging Bulk Part Status Active Transistor Type PNP Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 300V Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V Power - Max 20W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA Base Part Number MJE350
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BD680AG ON Semiconductor, Bipolar (BJT) Transistor PNP - Darlington 80V 4A 40W Through Hole TO-225AA,
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CZT3906 TR Central Semiconductor Corp, Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 2W Surface Mount SOT-223,
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BC869-25,115 Nexperia USA Inc., Bipolar (BJT) Transistor PNP 20V 2A 140MHz 500mW Surface Mount SOT-89,
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