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MJE5730G

MJE5730G

Part NumberMJE5730G

ManufacturerON Semiconductor

DescriptionTRANS PNP 300V 1A TO220AB

DatasheetMJE5730, 31(A)

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 300V 1A 10MHz 40W Through Hole TO-220AB

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MJE5730G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	MJE5730, 31(A)
Standard Package	50
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	300V
Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V
Power - Max	40W
Frequency - Transition	10MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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MJE5730G - Tags

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