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MJW21196G


MJW21196G

Part NumberMJW21196G

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MJW21196G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package30
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)16A
Voltage - Collector Emitter Breakdown (Max)250V
Vce Saturation (Max) @ Ib, Ic3V @ 3.2A, 16A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8A, 5V
Power - Max200W
Frequency - Transition4MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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