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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MMBT5550L-51L, SMMBT5551L
Standard Package 1
Manufacturer ON Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 140V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
Power - Max 225mW
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Part Number MMBT5550
CJD122 TR13
Central Semiconductor Corp, Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 1.75W Surface Mount DPAK,
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DNBT8105-7
Diodes Incorporated, Bipolar (BJT) Transistor NPN 60V 1A 150MHz 600mW Surface Mount SOT-23-3,
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BC56PASX
Nexperia USA Inc., Bipolar (BJT) Transistor NPN 80V 1A 180MHz 420mW Surface Mount DFN2020D-3,
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BC817K-25HVL
Nexperia USA Inc., Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 350mW Surface Mount TO-236AB, Automotive, AEC-Q101
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FMMT493ATA
Diodes Incorporated, Bipolar (BJT) Transistor NPN 60V 1A 150MHz 500mW Surface Mount SOT-23-3,
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2N6387G
ON Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 60V 10A 2W Through Hole TO-220AB,
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2SC2713-GR,LF
Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150mW Surface Mount TO-236,
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2SC5242-O(Q)
Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 230V 15A 30MHz 130W Through Hole TO-3P(N),
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DSC700400L
Panasonic Electronic Components, Bipolar (BJT) Transistor NPN 50V 2A 120MHz 1W Surface Mount MiniP3-F2-B,
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NJW3281G
ON Semiconductor, Bipolar (BJT) Transistor NPN 250V 15A 30MHz 200W Through Hole TO-3P-3L,
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PN2222TA
ON Semiconductor, Bipolar (BJT) Transistor NPN 30V 600mA 300MHz 625mW Through Hole TO-92-3,
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MMBT489LT1G
ON Semiconductor, Bipolar (BJT) Transistor NPN 30V 1A 100MHz 710mW Surface Mount SOT-23-3 (TO-236),
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