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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet MMBT5550L-51L, SMMBT5551L
Standard Package 3000
Manufacturer ON Semiconductor
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 140V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
Power - Max 225mW
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Part Number MMBT5550
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STMicroelectronics, Bipolar (BJT) Transistor NPN 400V 1.5A 1.5W Through Hole TO-92AP,
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ON Semiconductor, Bipolar (BJT) Transistor NPN 350V 500mA 20W Through Hole TO-126-3,
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ON Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 100V 8A 80W Surface Mount TO-263 (D2Pak),
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ON Semiconductor, Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92-3,
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