MPS6601G


MPS6601G

Part NumberMPS6601G

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MPS6601G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package5000
ManufacturerON Semiconductor
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)25V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 1V
Power - Max625mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Base Part NumberMPS6601

MPS6601G - Tags

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