MPSW51G


MPSW51G

Part NumberMPSW51G

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 Long Body

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MPSW51G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package5000
ManufacturerON Semiconductor
Series-
PackagingBulk
Part StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic700mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 100mA, 1V
Power - Max1W
Frequency - Transition50MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92 (TO-226)

MPSW51G - Tags

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