MSC280SMA120B

Part NumberMSC280SMA120B

ManufacturerMicrosemi Corporation

DescriptionGEN2 SIC MOSFET 1200V 280MOHM TO

DatasheetSilicon Carbide Semiconductor Products

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1.2kV 9.4A (Tc) 55W (Tc) Through Hole TO-247-3

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MSC280SMA120B - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Silicon Carbide Semiconductor Products

Standard Package

Manufacturer

Microsemi Corporation

Series

Part Status

Active

FET Type

N-Channel

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1.2kV

Current - Continuous Drain (Id) @ 25°C

9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

350mOhm @ 5A, 20V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 20V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 1000V

FET Feature

Power Dissipation (Max)

55W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case