Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S16U
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	4GHz
Noise Figure (dB Typ @ f)	2.4dB @ 1GHz
Gain	4.5dBi
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 1V
Current - Collector (Ic) (Max)	60mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

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MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5V 60mA 4GHz 100mW Surface Mount USM,	View
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NSVF3007SG3T1G	ON Semiconductor, RF Transistor NPN 12V 30mA 8GHz 350mW Surface Mount 3-MCPH, Automotive, AEC-Q101	View
BFU520WX	NXP USA Inc., RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View
2SC5065-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
2SC4215-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount USM,	View
BFU768F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 220mW Surface Mount 4-DFP,	View

MT3S16U(TE85L,F)

Part NumberMT3S16U(TE85L,F)