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MT3S20TU(TE85L)


MT3S20TU(TE85L)

Part NumberMT3S20TU(TE85L)

Manufacturer

Description

Datasheet

Package / Case3-SMD, Flat Leads

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MT3S20TU(TE85L) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.45dB @ 20mA, 5V
Gain12dB
Power - Max900mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 5V
Current - Collector (Ic) (Max)80mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, Flat Leads
Supplier Device PackageUFM

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