MTY100N10E

Part NumberMTY100N10E

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 100A TO-264

DatasheetMTY100N10E

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 100A (Tc) 300W (Tc) Through Hole TO-264

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MTY100N10E - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

MTY100N10E

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

378nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10640pF @ 25V

FET Feature

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264

Package / Case

TO-264-3, TO-264AA

All categories

MTY100N10E

Part NumberMTY100N10E

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 100A TO-264

DatasheetMTY100N10E

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 100A (Tc) 300W (Tc) Through Hole TO-264

MTY100N10E - Product Attributes

MTY100N10E - Tags