MUN2211JT1G


MUN2211JT1G

Part NumberMUN2211JT1G

Manufacturer

Description

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MUN2211JT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Standard Package3000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Power - Max230mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSC-59
Base Part NumberMUN2211

MUN2211JT1G - Tags

MUN2211JT1G MUN2211JT1G PDF MUN2211JT1G datasheet MUN2211JT1G specification MUN2211JT1G image MUN2211JT1G India Renesas Electronics India MUN2211JT1G buy MUN2211JT1G MUN2211JT1G price MUN2211JT1G distributor MUN2211JT1G supplier MUN2211JT1G wholesales