MUN5212T1G


MUN5212T1G

Part NumberMUN5212T1G

Manufacturer

Description

Datasheet

Package / CaseSC-70, SOT-323

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

MUN5212T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package3000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Power - Max202mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70-3 (SOT323)
Base Part NumberMUN52**T

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MUN5212T1G - Tags

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