MUN5215DW1T1G

Part NumberMUN5215DW1T1G

ManufacturerON Semiconductor

DescriptionTRANS 2NPN PREBIAS 0.25W SOT363

DatasheetMUN5215DW1, NSBC114TDxx

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

To learn about the specification of MUN5215DW1T1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MUN5215DW1T1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of MUN5215DW1T1G.
We are offering MUN5215DW1T1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

MUN5215DW1T1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	MUN5215DW1, NSBC114TDxx
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363
Base Part Number	MUN52**DW1T

MUN5215DW1T1G - Related Products

More >>

EMH61T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 50mA 250MHz 150mW Surface Mount EMT6,	View
RN1607(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6,	View
RN1903,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
DMC561000R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
EMG3T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT3,	View
RN1910,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount US6,	View
SMUN5235DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363,	View
NSBC115EDXV6T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563,	View
RN1702JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV,	View
PUMH20,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
DMC564000R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B,	View
RN1703JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV,	View

MUN5215DW1T1G - Tags

MUN5215DW1T1G MUN5215DW1T1G PDF MUN5215DW1T1G datasheet MUN5215DW1T1G specification MUN5215DW1T1G image MUN5215DW1T1G India Renesas Electronics India MUN5215DW1T1G buy MUN5215DW1T1G MUN5215DW1T1G price MUN5215DW1T1G distributor MUN5215DW1T1G supplier MUN5215DW1T1G wholesales