MUN5313DW1T1G

Part NumberMUN5313DW1T1G

ManufacturerON Semiconductor

DescriptionTRANS PREBIAS NPN/PNP SOT363

DatasheetMUN5313DW1, NSBC144EPDxx

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

To learn about the specification of MUN5313DW1T1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MUN5313DW1T1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of MUN5313DW1T1G.
We are offering MUN5313DW1T1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

MUN5313DW1T1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	MUN5313DW1, NSBC144EPDxx
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	47kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363
Base Part Number	MUN53**DW1

MUN5313DW1T1G - Related Products

More >>

RN4902FE,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6,	View
EMD30T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 30V 100mA, 200mA 250MHz, 260MHz 150mW Surface Mount EMT6,	View
IMD16AT108	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA, 500mA 250MHz 300mW Surface Mount SMT6,	View
DME914C10R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 300MHz 125mW Surface Mount SSMini6-F3-B,	View
DMG563H50R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
RN4608(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
EMD9FHAT2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6, Automotive, AEC-Q101	View
EMD12FHAT2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 250MHz 150mW Surface Mount EMT6, Automotive, AEC-Q101	View
DCX114YU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
EMD62T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6,	View
PRMD10Z	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 100mA 230MHz 480mW Surface Mount DFN1412-6, Automotive, AEC-Q101	View
DMG264050R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini6-G4-B,	View

MUN5313DW1T1G - Tags

MUN5313DW1T1G MUN5313DW1T1G PDF MUN5313DW1T1G datasheet MUN5313DW1T1G specification MUN5313DW1T1G image MUN5313DW1T1G India Renesas Electronics India MUN5313DW1T1G buy MUN5313DW1T1G MUN5313DW1T1G price MUN5313DW1T1G distributor MUN5313DW1T1G supplier MUN5313DW1T1G wholesales