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NDS356AP

NDS356AP

Part NumberNDS356AP

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 30V 1.1A SSOT3

DatasheetNDS356AP

Package / CaseTO-236-3, SC-59, SOT-23-3

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Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount SuperSOT-3

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NDS356AP - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NDS356AP
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	200mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.4nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT-3
Package / Case	TO-236-3, SC-59, SOT-23-3

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