NJVMJD112G

Part NumberNJVMJD112G

ManufacturerON Semiconductor

DescriptionTRANS NPN DARL 100V 2A DPAK-4

DatasheetMJD112,117

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK

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NJVMJD112G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

MJD112,117

Standard Package

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Active

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

3V @ 40mA, 4A

Current - Collector Cutoff (Max)

20µA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 2A, 3V

Power - Max

1.75W

Frequency - Transition

25MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

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