Home/Product Catalog/Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single/ NJW44H11G

NJW44H11G

NJW44H11G

Part NumberNJW44H11G

ManufacturerON Semiconductor

DescriptionTRANS NPN 80V 10A TO-3P

DatasheetNJW44H11G

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 80V 10A 85MHz 120W Through Hole TO-3P-3L

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NJW44H11G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	NJW44H11G
Standard Package	30
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	10A
Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A
Current - Collector Cutoff (Max)	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 4A, 2V
Power - Max	120W
Frequency - Transition	85MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P-3L

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