NSBA123EF3T5G


NSBA123EF3T5G

Part NumberNSBA123EF3T5G

Manufacturer

Description

Datasheet

Package / CaseSOT-1123

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Lead TimeTo be Confirmed

Detailed Description

NSBA123EF3T5G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
Standard Package8000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
Power - Max254mW
Mounting TypeSurface Mount
Package / CaseSOT-1123
Supplier Device PackageSOT-1123

NSBA123EF3T5G - Tags

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