NSBA143ZDXV6T1G

Part NumberNSBA143ZDXV6T1G

ManufacturerON Semiconductor

DescriptionTRANS PREBIAS DUAL PNP SOT563

DatasheetMUN5133DW1, NSBA143ZDxx

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

To learn about the specification of NSBA143ZDXV6T1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NSBA143ZDXV6T1G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NSBA143ZDXV6T1G.
We are offering NSBA143ZDXV6T1G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NSBA143ZDXV6T1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	MUN5133DW1, NSBA143ZDxx
Standard Package	4000
Manufacturer	ON Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	500mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-563
Base Part Number	NSBA1*

NSBA143ZDXV6T1G - Related Products

More >>

RN2610(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
EMB51T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 30mA 250MHz 150mW Surface Mount EMT6,	View
RN2502(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV,	View
RN2503(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV,	View
RN2911FE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6,	View
DMA561070R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
DDA114YU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
DMA261030R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini5-G3-B,	View
RN2603(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
PUMB9,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
RN2964(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount US6,	View
RN2705JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ESV,	View

NSBA143ZDXV6T1G - Tags

NSBA143ZDXV6T1G NSBA143ZDXV6T1G PDF NSBA143ZDXV6T1G datasheet NSBA143ZDXV6T1G specification NSBA143ZDXV6T1G image NSBA143ZDXV6T1G India Renesas Electronics India NSBA143ZDXV6T1G buy NSBA143ZDXV6T1G NSBA143ZDXV6T1G price NSBA143ZDXV6T1G distributor NSBA143ZDXV6T1G supplier NSBA143ZDXV6T1G wholesales