NSBC114EPDXV6T5G

Part NumberNSBC114EPDXV6T5G

ManufacturerON Semiconductor

DescriptionTRANS PREBIAS NPN/PNP SOT563

DatasheetMUN5311DW1, NSBC114EPXxx

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

To learn about the specification of NSBC114EPDXV6T5G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NSBC114EPDXV6T5G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of NSBC114EPDXV6T5G.
We are offering NSBC114EPDXV6T5G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

NSBC114EPDXV6T5G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Datasheet

MUN5311DW1, NSBC114EPXxx

Standard Package

8000

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Active

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

35 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

Base Part Number

NSBC1*

All categories